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CSD85312Q3EMosfet Array 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
1:$0.9900
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD853-398610
ManufacturerTexas Instruments
MPN #.CSD85312Q3E
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetCSD85312Q3E(PDF)
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In Stock: 5418
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.9900
Ext. Price$ 0.9900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9900$0.9900
10$0.8120$8.1200
100$0.6320$63.2000
500$0.5350$267.5000
1000$0.4360$436.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3) Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD85312
Configuration2 N-Channel (Dual) Common Source
Continuous Drain Current (ID) @ 25°C39A
Drain-to-Source Voltage (VDS)20V
FET FeatureLogic Level Gate, 5V Drive
Gate Charge Total (Qg)(Max.)15.2nC @ 4.5V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2390pF @ 10V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max2.5W
RDS(on) Drain-to-Source On Resistance12.4mOhm @ 10A, 8V
Package Type (Mfr.)8-VSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.4V @ 250µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)