CSD25483F4-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection
1:$0.3300
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD254-610149
ManufacturerTexas Instruments
MPN #.CSD25483F4
Estimated Lead Time6 Weeks
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Datasheet
CSD25483F4(PDF)
CSD25483F4(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.3300
Ext. Price$ 0.3300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3300$0.3300
10$0.2330$2.3300
100$0.1170$11.7000
500$0.0950$47.5000
1000$0.0710$71.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD25483
Continuous Drain Current (ID) @ 25°C1.6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)0.959 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)198 pF @ 10 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance205mOhm @ 500mA, 8V
Package Type (Mfr.)3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)-12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case3-XFDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)