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CSD25304W1015-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm

1:$0.4100

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD253-511991
ManufacturerTexas Instruments
MPN #.CSD25304W1015
Estimated Lead Time6 Weeks
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In Stock: 1945
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.4100
Ext. Price$ 0.4100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4100$0.4100
10$0.3490$3.4900
100$0.2430$24.3000
500$0.1900$95.0000
1000$0.1540$154.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD25304
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)4.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)595 pF @ 10 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation750mW (Ta)
RDS(on) Drain-to-Source On Resistance32.5mOhm @ 1.5A, 4.5V
Package Type (Mfr.)6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.15V @ 250µA
Package / Case6-UFBGA, DSBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)