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CSD25213W10-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection
1:$0.3130
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD252-636798
ManufacturerTexas Instruments
MPN #.CSD25213W10
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetCSD25213W10(PDF)
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In Stock: 10579
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.3130
Ext. Price$ 0.3130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3130$0.3130
10$0.2410$2.4100
100$0.1450$14.5000
500$0.1340$67.0000
1000$0.0910$91.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3) Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD25213
Continuous Drain Current (ID) @ 25°C1.6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)2.9 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)478 pF @ 10 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance47mOhm @ 1A, 4.5V
Package Type (Mfr.)4-DSBGA (1x1)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)-6V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 250µA
Package / Case4-UFBGA, DSBGA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)