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CSD23285F5T-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection
1:$0.7800
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD232-645588
ManufacturerTexas Instruments
MPN #.CSD23285F5T
Estimated Lead Time12 Weeks
SampleGet Free Sample
DatasheetCSD23285F5 Datasheet(PDF)
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In Stock: 1561
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.7800
Ext. Price$ 0.7800
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7800$0.7800
10$0.6390$6.3900
100$0.4970$49.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesFemtoFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD23285
Continuous Drain Current (ID) @ 25°C5.4A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)4.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)628 pF @ 6 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance35mOhm @ 1A, 4.5V
Package Type (Mfr.)3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)-6V
VGS(th) Gate-to-Source Threshold Voltage (Max.)950mV @ 250µA
Package / Case3-SMD, No Lead
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)