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CSD22206WT-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection
1:$0.7570
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD222-547114
ManufacturerTexas Instruments
MPN #.CSD22206WT
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetCSD22206W Datasheet(PDF)
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In Stock: 10444
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.7570
Ext. Price$ 0.7570
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7570$0.7570
10$0.6200$6.2000
100$0.4820$48.2000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD22206
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)8 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)14.6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2275 pF @ 4 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 2A, 4.5V
Package Type (Mfr.)9-DSBGA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)-6V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.05V @ 250µA
Package / Case9-UFBGA, DSBGA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)