CSD19532Q5BN-Channel 100 V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)
1:$1.9630
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD195-305049
ManufacturerTexas Instruments
MPN #.CSD19532Q5B
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
CSD19532Q5B Datasheet(PDF)
CSD19532Q5B Datasheet(PDF)
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Service
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.9630
Ext. Price$ 1.9630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9630$1.9630
10$1.6340$16.3400
100$1.3000$130.0000
500$1.1000$550.0000
1000$0.9340$934.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD19532
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)62 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4810 pF @ 50 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 195W (Tc)
RDS(on) Drain-to-Source On Resistance4.9mOhm @ 17A, 10V
Package Type (Mfr.)8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.2V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)