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CSD19531Q5AT100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm

1:$1.7050

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD195-544729
ManufacturerTexas Instruments
MPN #.CSD19531Q5AT
Estimated Lead Time20 Weeks
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In Stock: 4131
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.7050
Ext. Price$ 1.7050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7050$1.7050
10$1.4190$14.1900
100$1.1300$113.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm
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N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3
Mosfet Array 30V 45A 2.8W Surface Mount 8-LSON (5x6)
Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD19531
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3870 pF @ 50 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.3W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 16A, 10V
Package Type (Mfr.)8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.3V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)