CSD19501KCSN-Channel 80 V 100A (Ta) 217W (Tc) Through Hole TO-220-3
1:$1.4800
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD195-285423
ManufacturerTexas Instruments
MPN #.CSD19501KCS
Estimated Lead Time6 Weeks
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Datasheet
CSD19501KCS(PDF)
CSD19501KCS(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.4800
Ext. Price$ 1.4800
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4800$1.4800
50$1.1900$59.5000
100$0.9790$97.9000
500$0.8290$414.5000
1000$0.7030$703.0000
2000$0.6680$1336.0000
5000$0.6430$3215.0000
10000$0.6210$6210.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberCSD19501
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3980 pF @ 40 V
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation217W (Tc)
RDS(on) Drain-to-Source On Resistance6.6mOhm @ 60A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.2V @ 250µA
Package / CaseTO-220-3
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PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)