CSD18533KCS60-V, N channel NexFET™ power MOSFET, single TO-220, 6.3 mOhm
1:$1.2390
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD185-593151
ManufacturerTexas Instruments
MPN #.CSD18533KCS
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
CSD18533KCS(PDF)
CSD18533KCS(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.2390
Ext. Price$ 1.2390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2390$1.2390
50$0.9950$49.7500
100$0.8180$81.8000
500$0.6920$346.0000
1000$0.5870$587.0000
2000$0.5580$1116.0000
5000$0.5370$2685.0000
10000$0.5190$5190.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberCSD18533
Continuous Drain Current (ID) @ 25°C72A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3025 pF @ 30 V
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation192W (Tc)
RDS(on) Drain-to-Source On Resistance6.3mOhm @ 75A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)