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CSD18510Q5BT40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm

1:$2.1400

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ABRmicro #.ABR2045-CSD185-598709
ManufacturerTexas Instruments
MPN #.CSD18510Q5BT
Estimated Lead Time12 Weeks
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In Stock: 385
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 2.1400
Ext. Price$ 2.1400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1400$2.1400
10$1.7800$17.8000
100$1.4170$141.7000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Mosfet Array 30V 45A 2.8W Surface Mount 8-LSON (5x6)
Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD18510
Continuous Drain Current (ID) @ 25°C300A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)153 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11400 pF @ 20 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation156W (Tc)
RDS(on) Drain-to-Source On Resistance0.96mOhm @ 32A, 10V
Package Type (Mfr.)8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)