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CSD18504KCS40-V, N channel NexFET™ power MOSFET, single TO-220, 7 mOhm

1:$1.1990

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD185-449430
ManufacturerTexas Instruments
MPN #.CSD18504KCS
Estimated Lead Time6 Weeks
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In Stock: 619
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.1990
Ext. Price$ 1.1990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1990$1.1990
50$0.9610$48.0500
100$0.7610$76.1000
500$0.6450$322.5000
1000$0.5260$526.0000
2000$0.4940$988.0000
5000$0.4710$2355.0000
10000$0.4500$4500.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
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N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3)
N-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3
N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3
Mosfet Array 30V 45A 2.8W Surface Mount 8-LSON (5x6)
Technical Specifications
SeriesNexFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberCSD18504
Continuous Drain Current (ID) @ 25°C53A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 20 V
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation115W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 40A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)