CSD18502KCSN-Channel 40 V 100A (Tc) 259W (Tc) Through Hole TO-220-3
1:$1.9470
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD185-305511
ManufacturerTexas Instruments
MPN #.CSD18502KCS
Estimated Lead Time6 Weeks
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Datasheet
CSD18502KCS(PDF)
CSD18502KCS(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 1.9470
Ext. Price$ 1.9470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9470$1.9470
50$1.5620$78.1000
100$1.2850$128.5000
500$1.0880$544.0000
1000$0.9220$922.0000
2000$0.8770$1754.0000
5000$0.8430$4215.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberCSD18502
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)62 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4680 pF @ 20 V
MfrTexas Instruments
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation259W (Tc)
RDS(on) Drain-to-Source On Resistance2.9mOhm @ 100A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)