CSD17308Q3 Texas Instruments

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CSD17308Q330-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm

1:$0.7400

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ABRmicro #.ABR2045-CSD173-594393

ManufacturerTexas Instruments

MPN #.CSD17308Q3

Estimated Lead Time12 Weeks

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Datasheet

CSD17308Q3(PDF)

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In Stock: 21392

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Packaging

Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging

Shipping DateNovember 8, 2024

* Quantity

Unit Price$ 0.7400

Ext. Price$ 0.7400

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* Prices exclude tax, and all prices are in USD.

Price Gradients

Qty.Unit PriceExt. Price

1$0.7400$0.7400

10$0.6390$6.3900

100$0.4430$44.3000

500$0.3700$185.0000

1000$0.3150$315.0000

* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.

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Technical Specifications

SeriesNexFET™

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Abrmicro® Custom Packaging

Lifecycle StatusActive

Base Product NumberCSD17308

Continuous Drain Current (ID) @ 25°C14A (Ta), 44A (Tc)

Drain-to-Source Voltage (VDS)30 V

Drain-to-Source On Resistance (Max. Min.Rᴅs(on))3V, 8V

FET Feature-

FET TypeN-Channel

Gate Charge Total (Qg)(Max.)5.1 nC @ 4.5 V

Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 15 V

MfrTexas Instruments

Mounting StyleSurface Mount

Operating Temperature-55°C ~ 150°C (TJ)

Maximum Power Dissipation2.7W (Ta)

RDS(on) Drain-to-Source On Resistance10.3mOhm @ 10A, 8V

Package Type (Mfr.)8-VSON-CLIP (3.3x3.3)

TechnologyMOSFET (Metal Oxide)

Gate-to-Source Voltage (Vɢs)+10V, -8V

VGS(th) Gate-to-Source Threshold Voltage (Max.)1.8V @ 250µA

Package / Case8-PowerTDFN

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Datasheets

CSD17308Q3

Manufacturer Product Page

CSD17308Q3 Specifications