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CSD17305Q5A30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.6 mOhm
1:$1.2070
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD173-579457
ManufacturerTexas Instruments
MPN #.CSD17305Q5A
Estimated Lead Time6 Weeks
SampleGet Free Sample
DatasheetCSD17305Q5A(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.2070
Ext. Price$ 1.2070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2070$1.2070
10$0.9840$9.8400
100$0.7660$76.6000
500$0.6490$324.5000
1000$0.5290$529.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3) Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD17305
Continuous Drain Current (ID) @ 25°C29A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))3V, 8V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 15 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta)
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 30A, 8V
Package Type (Mfr.)8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+10V, -8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.6V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)