CSD16556Q5B25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm
1:$1.7950
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD165-447226
ManufacturerTexas Instruments
MPN #.CSD16556Q5B
Estimated Lead Time6 Weeks
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Datasheet
CSD16556Q5B(PDF)
CSD16556Q5B(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.7950
Ext. Price$ 1.7950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7950$1.7950
10$1.4940$14.9400
100$1.1880$118.8000
500$1.0050$502.5000
1000$0.8530$853.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD16556
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6180 pF @ 15 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.2W (Ta), 191W (Tc)
RDS(on) Drain-to-Source On Resistance1.07mOhm @ 30A, 10V
Package Type (Mfr.)8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.7V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)