CSD16414Q525-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
1:$1.6170
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD164-565488
ManufacturerTexas Instruments
MPN #.CSD16414Q5
Estimated Lead Time6 Weeks
SampleGet Free Sample
Datasheet
CSD16414Q5(PDF)
CSD16414Q5(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 1821
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.6170
Ext. Price$ 1.6170
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6170$1.6170
10$1.3460$13.4600
100$1.0710$107.1000
500$0.9060$453.0000
1000$0.7690$769.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
CSD17577Q5AT$0.8200
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm
CSD17579Q3AT$0.7170
N-Channel 30 V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.3)CSD18503Q5AT$1.3190
N-Channel 40 V 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6)
CSD19505KTTT$3.4120
N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3)
Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD16414
Continuous Drain Current (ID) @ 25°C34A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3650 pF @ 12.5 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.2W (Ta)
RDS(on) Drain-to-Source On Resistance1.9mOhm @ 30A, 10V
Package Type (Mfr.)8-VSON-CLIP (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+16V, -12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Manufacturer Product Page
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)