CSD16406Q325-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 7.4 mOhm
1:$0.8690
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ABRmicro #.ABR2045-CSD164-591347
ManufacturerTexas Instruments
MPN #.CSD16406Q3
Estimated Lead Time6 Weeks
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Datasheet
CSD16406Q3(PDF)
CSD16406Q3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.8690
Ext. Price$ 0.8690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8690$0.8690
10$0.7130$7.1300
100$0.5550$55.5000
500$0.4700$235.0000
1000$0.3820$382.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD16406
Continuous Drain Current (ID) @ 25°C19A (Ta), 60A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 12.5 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.7W (Ta)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 20A, 10V
Package Type (Mfr.)8-VSON-CLIP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+16V, -12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)