ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
CSD16323Q3CN-Channel 25 V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-SON-EP (3x3)

1:$1.0700

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-CSD163-337628
ManufacturerTexas Instruments
MPN #.CSD16323Q3C
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetCSD16323Q3C(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 1.0700
Ext. Price$ 1.0700
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0700$1.0700
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
CSD17577Q5AT$0.8200
Texas Instruments
N-Channel 30 V 60A (Ta) 3W (Ta), 53W (Tc) Surface Mount 8-VSONP (5x6)
CSD17579Q3AT$0.7170
Texas Instruments
N-Channel 30 V 20A (Ta) 3.2W (Ta), 29W (Tc) Surface Mount 8-VSONP (3x3.3)
CSD18503Q5AT$1.3190
Texas Instruments
N-Channel 40 V 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6)
CSD19505KTTT$3.4120
Texas Instruments
N-Channel 80 V 200A (Ta) 300W (Tc) Surface Mount TO-263 (DDPAK-3)
CSD19531KCS$1.7140
Texas Instruments
N-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3
CSD19536KCS$3.5560
Texas Instruments
N-Channel 100 V 150A (Ta) 375W (Tc) Through Hole TO-220-3
CSD87355Q5DT$2.4530
Texas Instruments
Mosfet Array 30V 45A 2.8W Surface Mount 8-LSON (5x6)
Technical Specifications
SeriesNexFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberCSD16323
Continuous Drain Current (ID) @ 25°C21A (Ta), 60A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))3V, 8V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 12.5 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 24A, 8V
Package Type (Mfr.)8-SON-EP (3x3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+10V, -8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
CSD16323Q3C
Manufacturer Product Page
CSD16323Q3C Specifications
PCN Design/Specification
Qualification Revision A 01/Jul/2014
PCN Obsolescence/ EOL
Mult Dev EOL 10/Aug/2018
Video File
PowerStack™ Packaging Technology Overview
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)