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CSD13380F3T12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

1:$0.7320

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ABRmicro #.ABR2045-CSD133-562797
ManufacturerTexas Instruments
MPN #.CSD13380F3T
Estimated Lead Time6 Weeks
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In Stock: 20386
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.7320
Ext. Price$ 0.7320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7320$0.7320
10$0.6340$6.3400
100$0.4390$43.9000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesFemtoFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberCSD13380
Continuous Drain Current (ID) @ 25°C3.6A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)156 pF @ 6 V
MfrTexas Instruments
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance76mOhm @ 400mA, 4.5V
Package Type (Mfr.)3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.3V @ 250µA
Package / Case3-XFDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)