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UPA621TT-E1-AN-Channel 20 V 5A (Ta) 200mW (Ta) Surface Mount 6-WSOF

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ABRmicro #.ABR2045-UPA621-972420
ManufacturerRenesas Electronics
MPN #.UPA621TT-E1-A
Estimated Lead Time-
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DatasheetDatasheetUPA621TT-E1-A(PDF)
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In Stock: 21000
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)3.3 nC @ 4 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)270 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation200mW (Ta)
RDS(on) Drain-to-Source On Resistance50mOhm @ 2.5A, 4.5V
Package Type (Mfr.)6-WSOF
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 1mA
Package / Case6-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
UPA621TT-E1-A
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The UPA621TT-E1-A is an N-Channel MOSFET manufactured by Renesas Electronics. It is designed for surface mounting and comes in a compact 6-WSOF package. This transistor can handle a continuous current of 5A and a voltage of up to 20V, with a power dissipation capacity of 200mW, all measured under TA conditions. When a current of 2.5A flows through it at a gate voltage of 4.5V, it has an on-resistance of 50 milliohms. Its input capacitance is specified at 270 pF when measured at 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.