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RJK0601DPN-E0#T2N-Channel 60 V 110A (Ta) 200W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-RJK060-924183
ManufacturerRenesas Electronics
MPN #.RJK0601DPN-E0#T2
Estimated Lead Time-
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DatasheetDatasheetRJK0601DPN-E0(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C110A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)141 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10000 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation200W (Tc)
RDS(on) Drain-to-Source On Resistance3.1mOhm @ 55A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
RJK0601DPN-E0
PCN Assembly/Origin
Wafer Fabrication Site Change 02/Oct/2013
PCN Obsolescence/ EOL
Mult Dev EOL 15/Dec/2018Multiple Devices 15/Aug/2013
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)