UPA2820T1S-E2-ATN-Channel 30 V 22A (Tc) 1.5W (Ta), 16W (Tc) Surface Mount 8-HWSON (3.3x3.3)
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ABRmicro #.ABR2045-UPA282-1024100
ManufacturerRenesas Electronics
MPN #.UPA2820T1S-E2-AT
Estimated Lead Time-
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Datasheet
UPA2820T1S(PDF)
UPA2820T1S(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2330 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta), 16W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 22A, 10V
Package Type (Mfr.)8-HWSON (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-PowerWDFN
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Datasheets
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The UPA2820T1S-E2-AT is an N-Channel MOSFET from Renesas Electronics designed for efficient power management in electronic devices. It is capable of handling up to 22A at a maximum drain-to-source voltage of 30V, with a power dissipation of 1.5W when mounted on the surface (Ta) and 16W in thermal conditions (Tc). The device features a low on-resistance of 5.3mOhm at 22A, making it suitable for reducing power loss. It operates with gate-source voltages of 4.5V to 10V. The MOSFET is housed in a compact 8-HWSON package, measuring 3.3x3.3mm, making it suitable for surface mount applications.
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