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UPA2802T1L-E2-AYN-Channel 20 V 18A (Ta) Surface Mount 8-DFN3333 (3.3x3.3)

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ABRmicro #.ABR2045-UPA280-950453
MPN #.UPA2802T1L-E2-AY
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DatasheetDatasheetuPA2802(PDF)
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In Stock: 147000
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C18A (Ta)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 18A, 10V
Package Type (Mfr.)8-DFN3333 (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case8-VDFN Exposed Pad
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Renesas Electronics UPA2802T1L-E2-AY is an advanced N-Channel MOSFET designed for efficient power management in electronic devices. Encased in a compact 8-DFN3333 package, measuring 3.3mm by 3.3mm, it supports a voltage rating of 20 V and a maximum current of 18A, ensuring robust performance in space-constrained applications. It features a capacitance of 1800 pF at 10 V, a gate threshold voltage of 2.5V at 1mA, and a total gate charge of 16 nC at 5 V, contributing to its effectiveness in switching applications. This surface mount device offers a reliable solution for designers seeking to optimize space and performance in their electronic circuits.
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