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RJK5026DPP-M0#T2N-Channel 500 V 6A (Ta) 28.5W (Tc) Through Hole TO-220FL

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ABRmicro #.ABR2045-RJK502-971697
ManufacturerRenesas Electronics
MPN #.RJK5026DPP-M0#T2
Estimated Lead Time-
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DatasheetDatasheetRJK5026DPP-M0#T2(PDF)
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In Stock: 91
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
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Lifecycle StatusActive
Base Product NumberRJK5026
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation28.5W (Tc)
RDS(on) Drain-to-Source On Resistance1.7Ohm @ 3A, 10V
Package Type (Mfr.)TO-220FL
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Datasheets
RJK5026DPP-M0#T2
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK5026DPP-M0#T2 is a high-performance N-Channel MOSFET fabricated by Renesas Electronics, designed for efficient power handling. It features a voltage rating of 500 V and a current capability of 6A at ambient temperature (Ta), delivering a power dissipation of 28.5W when mounted on a suitable heat sink (Tc). The device is housed in a TO-220FL through-hole package, which aids in effective thermal management. It operates with a gate threshold voltage of 10V and presents an input capacitance of 440 pF at 25 V, making it suitable for various high-voltage switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.