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RJK5012DPP-E0#T2N-Channel 500 V 12A (Ta) 30W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-RJK501-930327
ManufacturerRenesas Electronics
MPN #.RJK5012DPP-E0#T2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetRJK5012DPP-E0#T2(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1100 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance620mOhm @ 6A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
RJK5012DPP-E0#T2
PCN Obsolescence/ EOL
Mult Dev EOL 15/Dec/2018
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK5012DPP-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics, designed for high-voltage and high-current applications. It features a maximum voltage rating of 500 V and can conduct a continuous current of up to 12A at a 30W power dissipation under specific conditions, thanks to its TO-220FP through-hole package. This MOSFET offers a gate charge of 29 nC at 10 V, indicating efficient switching capability, and it presents a low on-resistance of 620 mOhm at a current of 6A and a gate-source voltage of 10V, which helps in reducing conduction losses. Its robust construction and electrical characteristics make it suitable for various demanding applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.