RJK5002DPD-00#J2N-Channel 500 V 2.4A (Ta) 30W (Tc) Surface Mount MP-3A
1:$0.4250
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ABRmicro #.ABR2045-RJK500-938253
ManufacturerRenesas Electronics
MPN #.RJK5002DPD-00#J2
Estimated Lead Time18 Weeks
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Datasheet
RJK5002DPD(PDF)
RJK5002DPD(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.4250
Ext. Price$ 0.4250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.4250$1275.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberRJK5002
Continuous Drain Current (ID) @ 25°C2.4A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)165 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance5Ohm @ 1.2A, 10V
Package Type (Mfr.)MP-3A
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK5002DPD-00#J2 is an N-channel MOSFET designed and manufactured by Renesas Electronics. It features a voltage rating of 500 V and a current rating of 2.4A when measured in ambient air (Ta), with a power dissipation capability of 30W when measured with the case (Tc). The device is housed in a surface-mount MP-3A package. It has a total gate charge of 6.7 nC at 10 V and an input capacitance of 165 pF at 25 V. These specifications make it well-suited for various high-voltage and high-efficiency applications requiring a reliable semiconductor switch.
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