ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
RJK4013DPE-00#J3N-Channel 400 V 17A (Ta) 100W (Tc) Surface Mount LDPAK

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-RJK401-1014498
ManufacturerRenesas Electronics
MPN #.RJK4013DPE-00#J3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetRJK4013DPE(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 118
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
NE3517S03-T1D-A$1.0320
Renesas Electronics
RF Mosfet 2 V 10 mA 20GHz 13.5dB S03
RJH1CF7RDPQ-80#T2N/A
Renesas Electronics
IGBT 1200 V 60 A 250 W Through Hole TO-247
RJH60F5DPQ-A0#T0N/A
Renesas Electronics
IGBT Trench 600 V 80 A 260.4 W Through Hole TO-247A
RJH60V2BDPP-M0#T2N/A
Renesas Electronics
IGBT Trench 600 V 25 A 34 W Through Hole TO-220FL
RJK0601DPN-E0#T2N/A
Renesas Electronics
N-Channel 60 V 110A (Ta) 200W (Tc) Through Hole TO-220AB
RJK6035DPP-A0#T2$1.7690
Renesas Electronics
N-Channel 500 V Through Hole TO-220FP
UPA2717AGR-E1-AT$1.2750
Renesas Electronics
P-Channel 30 V 15A (Ta) Surface Mount 8-PSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberRJK4013
Continuous Drain Current (ID) @ 25°C17A (Ta)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1450 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 8.5A, 10V
Package Type (Mfr.)LDPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseSC-83
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RJK4013DPE
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK4013DPE-00#J3 is an N-Channel MOSFET manufactured by Renesas Electronics, designed for use in surface mount configurations using an LDPAK package. It can handle up to 400V and supports a current capacity of 17A with a power dissipation capability of 100W at proper thermal conditions (Tc). The part has a gate charge of 38 nC when driven with 10V, and a typical on-state resistance of 300 mOhm at 8.5A and 10V. It also supports a gate-source voltage range of ±30V, making it suitable for various switching applications where robust electrical performance is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.