RJK4002DJE-00#Z0N-Channel 400 V 3A (Ta) 2.54W (Tc) Through Hole TO-92MOD
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ABRmicro #.ABR2045-RJK400-928911
ManufacturerRenesas Electronics
MPN #.RJK4002DJE-00#Z0
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberRJK4002
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 100 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)165 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2.54W (Tc)
Qualification-
RDS(on) Drain-to-Source On Resistance2.9Ohm @ 1.5A, 10V
Package Type (Mfr.)TO-92MOD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
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Environmental Information
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK4002DJE-00#Z0 is an N-Channel MOSFET produced by Renesas Electronics, characterized by its capacity to handle up to 400 V and a continuous current of 3A. Encased in a TO-92MOD through-hole package, it offers a power dissipation of 2.54W when mounted appropriately (Tc). This MOSFET has a threshold voltage tolerance of ±30V and exhibits a resistance of 2.9 Ohms at a drive voltage of 10V with a current of 1.5A.
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