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RJK0702DPP-E0#T2N-Channel 75 V 90A (Ta) 30W (Tc) Through Hole TO-220FP

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ABRmicro #.ABR2045-RJK070-1016397
ManufacturerRenesas Electronics
MPN #.RJK0702DPP-E0#T2
Estimated Lead Time-
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DatasheetDatasheetRJK0702DPP-E0#T2(PDF)
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In Stock: 1155
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C90A (Ta)
Drain-to-Source Voltage (VDS)75 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)89 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6450 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation30W (Tc)
RDS(on) Drain-to-Source On Resistance4.8mOhm @ 45A, 10V
Package Type (Mfr.)TO-220FP
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Full Pack
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Datasheets
RJK0702DPP-E0#T2
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK0702DPP-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics, housed in a TO-220FP package suitable for through-hole mounting. It is designed to handle a continuous drain current of 90A at 75V and can dissipate up to 30W of power at the case (Tc). The device features a low on-resistance of 4.8 milliohms at 45A, 10V, making it efficient for high-power applications. With a total gate charge of 89 nC at 10V and an input capacitance of 6450 pF at 10V, the MOSFET offers a good balance of switching speed and efficiency.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.