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RJK0658DPA-00#J5AN-Channel 60 V 25A (Ta) 50W (Tc) Surface Mount 8-WPAK

1:$0.7950

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-RJK065-980337
ManufacturerRenesas Electronics
MPN #.RJK0658DPA-00#J5A
Estimated Lead Time18 Weeks
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DatasheetDatasheetRJK0658DPA(PDF)
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In Stock: 4200
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7950
Ext. Price$ 0.7950
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.7950$2384.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C25A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1580 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance11.1mOhm @ 12.5A, 10V
Package Type (Mfr.)8-WPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-WFDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RJK0658DPA
PCN Assembly/Origin
Wafer Fabrication Site Change 02/Oct/2013
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK0658DPA-00#J5A is a surface-mount N-channel MOSFET manufactured by Renesas Electronics, designed for efficiency in power management applications. It operates with a maximum drain-source voltage of 60 volts and can handle a continuous drain current of 25 amperes when mounted on a surface with adequate thermal management. The device features an output power capacity of 50 watts in controlled conditions (case mounting). The gate-source threshold voltage is 10 volts, and its input capacitance is 1580 pF at 10 volts, with a gate-source voltage rating of ±20 volts, making it suitable for robust and reliable switching tasks in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.