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RJK0603DPN-E0#T2N-Channel 60 V 80A (Ta) 125W (Tc) Through Hole TO-220AB

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ABRmicro #.ABR2045-RJK060-1015769
ManufacturerRenesas Electronics
MPN #.RJK0603DPN-E0#T2
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetRJK0603DPN-E0(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4150 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance5.2mOhm @ 40A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
RJK0603DPN-E0
PCN Assembly/Origin
Wafer Fabrication Site Change 02/Oct/2013
PCN Obsolescence/ EOL
Mult Dev EOL 19/Dec/2019
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK0603DPN-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics, designed for efficient current handling and power dissipation. Housed in a TO-220AB through-hole package, this part supports a maximum voltage of 60 V and a continuous current of 80A, with power dissipation capabilities up to 125W. It features a gate charge of 57 nC at 10 V and an input capacitance of 4150 pF at 10 V, indicative of its switching performance. This MOSFET is suitable for applications requiring robust power management and control in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.