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RJK0394DPA-00#J5AN-Channel 30 V 35A (Ta) 35W (Tc) Surface Mount 8-WPAK

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ABRmicro #.ABR2045-RJK039-966168
ManufacturerRenesas Electronics
MPN #.RJK0394DPA-00#J5A
Estimated Lead Time-
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DatasheetDatasheetRJK0394DPA-WS#J53(PDF)
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In Stock: 67200
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C35A (Ta)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2430 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 17.5A, 10V
Package Type (Mfr.)8-WPAK
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-PowerWDFN
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Extended Links
Datasheets
RJK0394DPA-WS#J53
Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The RJK0394DPA-00#J5A is an N-Channel MOSFET manufactured by Renesas Electronics, designed for surface mount applications. This device supports a maximum voltage of 30 V and a continuous current of 35A when measured at the ambient temperature (Ta). Its power dissipation capability reaches up to 35W when mounted on a thermal conductive material (Tc). The MOSFET features a low on-state resistance of 5.3 milliohms at 17.5A and a gate charge of 15.5 nanocoulombs at a gate-source voltage of 4.5V, which ensures efficient switching performance in semiconductor circuits. It is housed in an 8-WPAK package, offering a compact and reliable solution for electronic systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.