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NP90N04MUK-S18-AYN-Channel 40 V 90A (Tc) 1.8W (Ta), 176W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-NP90N0-1038028
MPN #.NP90N04MUK-S18-AY
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In Stock: 140
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberNP90N04
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7050 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 176W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 45A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part NP90N04MUK-S18-AY, manufactured by Renesas Electronics, is an N-channel MOSFET designed for through-hole mounting in a TO-220 package. It has a drain-source voltage (Vds) capability of 40 volts and can handle a continuous current of 90 amperes at a specified case temperature (Tc). The power dissipation is rated at 1.8 watts when mounted in free air (Ta) and 176 watts at the case temperature (Tc). The device features a threshold voltage of 4 volts at a gate-source current of 250 microamperes and a gate-source voltage tolerance of ±20 volts. Additionally, it has an input capacitance of 7050 pF when measured with a 25-volt bias.
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