NP90N04MUG-S18-AYN-Channel 40 V 90A (Tc) 1.8W (Ta), 217W (Tc) Through Hole TO-220-3
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ABRmicro #.ABR2045-NP90N0-952776
ManufacturerRenesas Electronics
MPN #.NP90N04MUG-S18-AY
Estimated Lead Time-
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Datasheet
NP90N04MUG(PDF)
NP90N04MUG(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
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Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)182 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11200 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 217W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 45A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NP90N04MUG-S18-AY is a high-performance N-Channel MOSFET manufactured by Renesas Electronics, designed to handle significant power requirements. It operates with a voltage capability of 40 volts and can manage a continuous current of up to 90 amperes under optimal conditions (Tc). The device is encapsulated in a TO-220-3 through-hole package, allowing for efficient heat dissipation and easy integration into circuit boards. This MOSFET features a total gate charge of 182 nanocoulombs at 10 volts and a gate-to-source capacitance of 11,200 picofarads at 25 volts, making it suitable for high-speed switching applications. With its power dissipation ratings of 1.8 watts (Ta) and 217 watts (Tc), it is built to accommodate demanding electrical environments.
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