NP88N04NUG-S18-AYN-Channel 40 V 88A (Tc) 1.8W (Ta), 200W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-NP88N0-929660
ManufacturerRenesas Electronics
MPN #.NP88N04NUG-S18-AY
Estimated Lead Time-
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Datasheet
NP88N04NUG(PDF)
NP88N04NUG(PDF)
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Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
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Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C88A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)250 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15000 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 44A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NP88N04NUG-S18-AY is an N-channel MOSFET produced by Renesas Electronics, designed for high-current and medium-voltage applications. It presents a drain-source voltage rating of 40V and a continuous drain current of up to 88A when mounted with a proper heat sink at case temperature (Tc). The component is encased in a TO-262 package, which facilitates through-hole mounting for secure and stable power connections. It features a low on-state resistance of 3.4 milliohms at 44A and 10V, enhancing its efficiency by minimizing power loss. This MOSFET supports a power dissipation of 1.8W when operating in free air (Ta) and 200W when appropriately heatsinked, at case temperature (Tc). Its maximum threshold gate-source voltage rating is 10V, allowing robust operation over a range of gate voltages, while sustaining a tolerance of ±20V, ensuring reliable performance under varying electrical conditions.
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