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NP80N04MHE-S18-AYN-Channel 40 V 80A (Tc) 1.8W (Ta), 120W (Tc) Through Hole TO-220

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ABRmicro #.ABR2045-NP80N0-1005471
ManufacturerRenesas Electronics
MPN #.NP80N04MHE-S18-AY
Estimated Lead Time-
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DatasheetDatasheetNP80N04NHE-S18-AY(PDF)
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In Stock: 159565
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 120W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
NP80N04NHE-S18-AY
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Renesas Electronics NP80N04MHE-S18-AY is an N-channel MOSFET designed for use in scenarios requiring efficient switching and amplification. It operates at a maximum voltage of 40V and can handle a continuous current of 80A under case conditions (Tc). This component showcases a power dissipation capability of 1.8W in free air (Ta) and 120W when mounted on a heat sink (Tc). Packaged in a TO-220 through-hole configuration, it ensures ease of integration into various circuit boards. It features a typical gate threshold voltage of 4V at 250µA and a gate charge of 60 nC at 10V, marking its efficiency in managing gate operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.