NP50P03YDG-E1-AYP-Channel 30 V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON
1:$1.9410
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ABRmicro #.ABR2045-NP50P0-966071
ManufacturerRenesas Electronics
MPN #.NP50P03YDG-E1-AY
Estimated Lead Time18 Weeks
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Datasheet
NP50P03YDG(PDF)
NP50P03YDG(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9410
Ext. Price$ 1.9410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9410$1.9410
10$1.6100$16.0970
100$1.2810$128.1380
500$1.0840$541.8750
1000$0.9190$919.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNP50P03
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)96 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3500 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation1W (Ta), 102W (Tc)
RDS(on) Drain-to-Source On Resistance8.4mOhm @ 25A, 10V
Package Type (Mfr.)8-HSON
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SMD, Flat Lead Exposed Pad
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NP50P03YDG-E1-AY is a P-Channel MOSFET manufactured by Renesas Electronics, designed for surface mount applications in a compact 8-HSON package. It exhibits a voltage handling capacity of 30 V and can deliver a current of up to 50A under certain conditions such as when the case temperature is optimized (Tc). This component has a power dissipation capacity of 1W in ambient conditions (Ta) and can handle up to 102W when thermally optimized (Tc). The MOSFET also features an input capacitance of 3500 pF when measured at 25 V, with a gate-source voltage tolerance of ±20V, making it suitable for a range of electronic applications requiring efficient power management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.