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NP180N055TUJ-E1-AYN-Channel 55 V 180A (Tc) 1.8W (Ta), 348W (Tc) Surface Mount TO-263-7

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ABRmicro #.ABR2045-NP180N-1023567
MPN #.NP180N055TUJ-E1-AY
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14250 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 348W (Tc)
RDS(on) Drain-to-Source On Resistance2.3mOhm @ 90A, 10V
Package Type (Mfr.)TO-263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NP180N055TUJ-E1-AY is a surface-mount N-Channel MOSFET manufactured by Renesas Electronics, housed in a TO-263-7 package. It is capable of handling a maximum drain-source voltage of 55 volts and a continuous drain current of 180A at a case temperature (Tc). This part exhibits a low on-state resistance of 2.3 milliohms at 90A and 10V, signifying efficient conduction capability. With a power dissipation rating of 348W (Tc) and 1.8W (Ta), it is designed to manage significant power levels. Additionally, this MOSFET features a total gate charge of 230 nC at a gate-source voltage of 10V.
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