NP160N055TUK-E1-AYN-Channel 55 V 160A (Tc) 1.8W (Ta), 250W (Tc) Surface Mount TO-263-7
1:$3.6680
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ABRmicro #.ABR2045-NP160N-1040584
ManufacturerRenesas Electronics
MPN #.NP160N055TUK-E1-AY
Estimated Lead Time18 Weeks
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Datasheet
NP160N055TUK(PDF)
NP160N055TUK(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Unit Price$ 3.6680
Ext. Price$ 3.6680
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Price Gradients
Qty.Unit PriceExt. Price
1$3.6680$3.6680
10$3.0820$30.8230
100$2.4930$249.2630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNP160N055
Continuous Drain Current (ID) @ 25°C160A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)189 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)11250 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation1.8W (Ta), 250W (Tc)
RDS(on) Drain-to-Source On Resistance2.1mOhm @ 80A, 10V
Package Type (Mfr.)TO-263-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part NP160N055TUK-E1-AY from Renesas Electronics is an N-Channel MOSFET characterized by its ability to handle a maximum of 160A of current at a 55V voltage rating. It comes in a surface mount TO-263-7 package. The device boasts a low on-resistance of 2.1mOhm at 80A and 10V, with a total gate charge of 189 nC at 10V, making it suitable for high power efficiency applications. Additionally, it has power dissipation capacities of 1.8W under typical conditions and up to 250W when mounted to a suitable heat sink, allowing it to accommodate significant thermal and electrical loads.
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