N0602N-S19-AYN-Channel 60 V 100A (Tc) 1.5W (Ta), 156W (Tc) Through Hole TO-220-3
1:$1.5050
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ABRmicro #.ABR2045-N0602N-1023809
ManufacturerRenesas Electronics
MPN #.N0602N-S19-AY
Estimated Lead Time18 Weeks
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Datasheet
N0602N(PDF)
N0602N(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.5050
Ext. Price$ 1.5050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5050$1.5050
10$1.2460$12.4630
100$0.9920$99.2380
500$0.8960$447.8440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberN0602N-S19
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)133 nC @ 10 V
Grade-
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7730 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta), 156W (Tc)
Qualification-
RDS(on) Drain-to-Source On Resistance4.6mOhm @ 50A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3 Isolated Tab
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The N0602N-S19-AY is an N-channel MOSFET manufactured by Renesas Electronics. It is designed for efficient power management, featuring a maximum drain-source voltage of 60V and a continuous drain current of 100A under optimal conditions. Encased in a TO-220-3 package for through-hole mounting, this MOSFET provides a power dissipation of 1.5W in free air and up to 156W when properly cooled. It exhibits a gate charge of 133 nC at 10V and a capacitance of 7730 pF at 25V, indicating its effectiveness in switching applications.
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