N0601N-ZK-E1-AYN-Channel 60 V 100A (Ta) 1.5W (Ta), 156W (Tc) Surface Mount TO-263
1:$1.3670
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ABRmicro #.ABR2045-N0601N-929773
ManufacturerRenesas Electronics
MPN #.N0601N-ZK-E1-AY
Estimated Lead Time18 Weeks
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Datasheet
N0601N(PDF)
N0601N(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.3670
Ext. Price$ 1.3670
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
800$1.3670$1093.9500
1600$1.1600$1856.4000
2400$1.1030$2646.9000
5600$1.0600$5938.1000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberN0601N-ZK-E1
Continuous Drain Current (ID) @ 25°C100A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)133 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7730 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 50A, 10V
Package Type (Mfr.)TO-263
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The N0601N-ZK-E1-AY is an N-Channel MOSFET manufactured by Renesas Electronics, designed for surface mount applications in a TO-263 package. This component can handle a voltage of up to 60 volts and a current of 100 amperes with a power dissipation of 1.5 watts in ambient conditions and 156 watts with proper case temperature management. It features a low on-resistance of 4.2 milliohms at 50 amperes with a gate-to-source voltage of 10 volts. Additionally, the device can withstand gate-to-source voltages up to ±20 volts, making it a robust choice for various electronic applications that require efficient power management.
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