HAT2299WP-EL-EN-Channel 150 V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)
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ABRmicro #.ABR2045-HAT229-965652
ManufacturerRenesas Electronics
MPN #.HAT2299WP-EL-E
Estimated Lead Time-
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Datasheet
HAT2299WP(PDF)
HAT2299WP(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberHAT2299
Continuous Drain Current (ID) @ 25°C14A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)710 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 7A, 10V
Package Type (Mfr.)8-WPAK (3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-PowerWDFN
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PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HAT2299WP-EL-E is an N-Channel MOSFET manufactured by Renesas Electronics, designed for surface-mount applications with an 8-WPAK (3) package. It operates with a drain-source voltage of up to 150 V and a continuous drain current of 14A at ambient temperature (Ta). The part delivers a power dissipation of 25W when mounted to a heat sink (Tc). It features a gate charge of 15 nC at a gate-source voltage of 10 V, and an input capacitance of 710 pF when the drain-source voltage is 25 V. This MOSFET offers efficiency and reliability suitable for various electronic projects requiring robust switching capabilities.
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