HAT2199R-EL-EN-Channel 30 V 11A (Ta) 2W (Ta) Surface Mount 8-SOP
1:$0.6980
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ABRmicro #.ABR2045-HAT219-962385
ManufacturerRenesas Electronics
MPN #.HAT2199R-EL-E
Estimated Lead Time-
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Datasheet
HAT2199R-EL-E(PDF)
HAT2199R-EL-E(PDF)
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Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6980
Ext. Price$ 0.6980
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Price Gradients
Qty.Unit PriceExt. Price
325$0.6980$226.8700
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C11A (Ta)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1060 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta)
RDS(on) Drain-to-Source On Resistance16.5mOhm @ 5.5A, 10V
Package Type (Mfr.)8-SOP
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HAT2199R-EL-E by Renesas Electronics is an N-Channel MOSFET designed for efficient power management in electronic devices. It is housed in a compact 8-SOP surface mount package, making it suitable for space-constrained applications. The MOSFET supports a maximum voltage of 30V and a current of 11A at a thermal rating of 2W (Ta). It exhibits a low on-state resistance of 16.5 milliohms when conducting 5.5A at 10V, which minimizes energy loss and enhances performance. Additionally, it has an input capacitance of 1060 pF at 10V, indicating its capability to handle switching operations effectively.
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