HAT2197R-EL-EN-Channel 30 V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOP
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ABRmicro #.ABR2045-HAT219-988234
ManufacturerRenesas Electronics
MPN #.HAT2197R-EL-E
Estimated Lead Time-
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Datasheet
HAT2197R(PDF)
HAT2197R(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberHAT2197
Continuous Drain Current (ID) @ 25°C16A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2650 pF @ 10 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 8A, 10V
Package Type (Mfr.)8-SOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HAT2197R-EL-E is a surface-mount N-Channel MOSFET manufactured by Renesas Electronics. It is designed to handle voltages up to 30V and currents of 16A with a power dissipation of 2.5W in standard conditions. The component is housed in an 8-SOP package. Notable electrical characteristics include a gate charge of 18 nC at 4.5V and a low on-state resistance of 6.7 mOhm when conducting 8A at 10V, making it suitable for efficient switching in compact spaces.
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