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HAT2185WPWS-EN-Channel 150 V 10A (Ta) 20W (Tc) Surface Mount 8-WPAK (3)

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ABRmicro #.ABR2045-HAT218-1023635
ManufacturerRenesas Electronics
MPN #.HAT2185WPWS-E
Estimated Lead Time-
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C10A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrRenesas Electronics Corporation
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation20W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 5A, 10V
Package Type (Mfr.)8-WPAK (3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1mA
Package / Case8-PowerWDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Obsolescence/ EOL
Mult Dev EOL 15/Dec/2018
PCN Packaging
Label Change-All Devices 01/Dec/2022
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The HAT2185WPWS-E by Renesas Electronics is an N-Channel MOSFET designed for surface mounting in an 8-WPAK (3) package. This component supports a maximum drain-source voltage of 150 V and can handle up to 10A of continuous current (Ta), with a power dissipation of 20W (Tc). It exhibits a drain-source on-state resistance of 190mOhm at a gate-source voltage of 10V and a current of 5A. Additionally, it features an input capacitance of 430 pF at 25 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.