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H5N2007LSTL-EMOSFET N-CH HS SW TO-263

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-H5N200-1032684
MPN #.H5N2007LSTL-E
Estimated Lead Time-
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C25A (Tj)
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))-
FET Feature-
FET Type-
MfrRenesas Electronics Corporation
Mounting Style-
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance-
Package Type (Mfr.)-
Technology-
Gate-to-Source Voltage (Vɢs)-
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / Case-
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)