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DS1250AB-100NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 100 ns 32-EDIP
N/A
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ABRmicro #.ABR2020-DS1250-697075
ManufacturerMaxim Integrated
MPN #.DS1250AB-100
Estimated Lead Time-
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DatasheetDS1250AB-DS1250Y(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
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Shipping DateNovember 3, 2024
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NVSRAM (Non-Volatile SRAM) Memory IC 16Kbit Parallel 100 ns 24-EDIP Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Access Time100 ns
Base Product NumberDS1250AB
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization512K x 8
Memory Size4Mbit
Memory TypeNon-Volatile
MfrAnalog Devices Inc./Maxim Integrated
Mounting StyleThrough Hole
Operating Temperature0°C ~ 70°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)32-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)
Supply Voltage4.75V ~ 5.25V
Write Cycle Time (Twc)100ns
Package / Case32-DIP Module (0.600", 15.24mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCN3A991B2A AT
HTSUS8542.32.0041 (Static read-write random access (SRAM); No import duty applies)