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DS1230AB-200+NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 200 ns 28-EDIP
1:$17.9580
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2020-DS1230-694869
ManufacturerMaxim Integrated
MPN #.DS1230AB-200+
Estimated Lead Time25 Weeks
SampleGet Free Sample
DatasheetDS1230Y, AB(PDF)
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In Stock: 21
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 17.9580
Ext. Price$ 17.9580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$17.9580$17.9580
12$17.7900$213.4800
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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NVSRAM (Non-Volatile SRAM) Memory IC 16Kbit Parallel 100 ns 24-EDIP Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Access Time200 ns
Base Product NumberDS1230AB
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization32K x 8
Memory Size256Kbit
Memory TypeNon-Volatile
MfrAnalog Devices Inc./Maxim Integrated
Mounting StyleThrough Hole
Operating Temperature0°C ~ 70°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)28-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)
Supply Voltage4.75V ~ 5.25V
Write Cycle Time (Twc)200ns
Package / Case28-DIP Module (0.600", 15.24mm)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8542.32.0041 (Static read-write random access (SRAM); No import duty applies)