IXTY48P05TP-Channel 50 V 48A (Tc) 150W (Tc) Surface Mount TO-252AA
1:$3.4110
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ABRmicro #.ABR2045-IXTY48-930558
ManufacturerLittelfuse®
MPN #.IXTY48P05T
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
IXT(Y,A,P)48P05T(PDF)
IXT(Y,A,P)48P05T(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.4110
Ext. Price$ 3.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4110$3.4110
70$2.7000$188.9870
140$2.3140$323.9780
560$2.0560$1151.3250
1050$1.7610$1848.5910
2030$1.6590$3366.8820
5040$1.5910$8016.4350
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesTrenchP™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXTY48
Continuous Drain Current (ID) @ 25°C48A (Tc)
Drain-to-Source Voltage (VDS)50 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3660 pF @ 25 V
MfrLittelfuse Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation150W (Tc)
RDS(on) Drain-to-Source On Resistance30mOhm @ 24A, 10V
Package Type (Mfr.)TO-252AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXTY48P05T manufactured by Littelfuse® is a P-Channel MOSFET designed for surface mount applications in a TO-252AA package. It operates with a maximum drain-source voltage of 50 V and can handle continuous current up to 48 A at the case temperature (Tc). The device features a maximum power dissipation of 150 W at Tc, ensuring efficient energy management in high-power setups. Its on-state resistance is 30 milliohms when driving 24 A at a gate-source voltage of 10 V, offering low on-resistance characteristics for effective performance. The MOSFET is also equipped to tolerate gate-source voltages of ±15 V, providing flexibility in driving and switching applications.
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